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NXP Semiconductors
PESD5V0S1ULD
Unidirectional ESD protection diode
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
P PP
I PP
T j
T amb
T stg
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
t p = 8/20 μ s
t p = 8/20 μ s
-
-
-
? 55
? 65
150
15
150
+150
+150
W
A
° C
° C
° C
[1]
Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.
Table 6. ESD maximum ratings
T amb = 25 ° C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
V ESD
electrostatic discharge voltage
IEC 61000-4-2
[1][2]
-
30
kV
(contact discharge)
MIL-STD-883 (human
-
10
kV
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to pin 2.
Table 7.
Standard
ESD standards compliance
Conditions
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
> 15 kV (air); > 8 kV (contact)
> 4 kV
001aaa631
120
I PP
(%)
80
100 % I PP ; 8 μ s
e ? t
001aaa630
I PP
100 %
90 %
5 0 % I PP ; 20 μ s
40
10 %
0
0
10
20
30
t ( μ s)
40
t r = 0.7 ns to 1 ns
30 ns
60 ns
t
Fig 2.
8/20 μ s pulse waveform according to
IEC 61000-4-5
Fig 3.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0S1ULD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 October 2010
? NXP B.V. 2010. All rights reserved.
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